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Proceedings Paper

Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch
Author(s): Weiyu Han; H. S. Lee; L. M. Casas; Kenneth A. Jones; Robert J. Zeto; Charles D. Mulford
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Paper Abstract

A non-alloyed Pd/GeTFi/Pt ohmic contact for an n-GaAs has been investigated. The specific contact resistance was 4.7x10-7Ω.cm2 for an n-GaAs film which was doped to 2x1018 -3.Auger depth profile showed that the interface between the contact and n-GaAs was abrupt. There was almost no change of Auger depth profiles before and after the sample was put in the furnace for 20 hours at 300 °C in an N2 ambient Scanning electron microscopy showed that the contact surface was very smooth after a 400 °C , 15 second anneal. Auger depth profiles and contact resistance measurements showed that the contacts begin to deteriorate when the rapid thermal annealing time exceeds 35seconds.

Paper Details

Date Published: 12 May 1992
PDF: 11 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59066
Show Author Affiliations
Weiyu Han, U.S. Army Electronics Technology and Devices Lab. (United States)
H. S. Lee, U.S. Army Electronics Technology and Devices Lab. (United States)
L. M. Casas, U.S. Army Electronics Technology and Devices Lab. (United States)
Kenneth A. Jones, U.S. Army Electronics Technology and Devices Lab. (United States)
Robert J. Zeto, U.S. Army Electronics Technology and Devices Lab. (United States)
Charles D. Mulford, U.S. Army Electronics Technology and Devices Lab. (United States)


Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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