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Proceedings Paper

Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts
Author(s): Robert J. Zeto; Charles D. Mulford; Wayne H. Chang; A. M. Balekdjian; Richard T. Lareau; S. N. Schauer; Fred J. Zutavern; Guillermo M. Loubriel
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Paper Abstract

A process was developed for the fabrication of high power GaAs photoconductive switches with ohmic Ni/Ge/Au contact metallization in a lateral NIN switch configuration. The main features of the process were ion implanted silicon in the contact regions and rapid thermal processing for annealing the implants and alloying the metallization. A 50 mill dia. process wafer included 28 photolithographically defined switches of four different types to comparatively investigate the effects of ohmic contacts and switch dimensions on switch lifetime, together with monitors to characterize the ohmic contact process.

Paper Details

Date Published: 12 May 1992
PDF: 8 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59065
Show Author Affiliations
Robert J. Zeto, U.S. Army Electronics Technology and Devices Lab. (United States)
Charles D. Mulford, U.S. Army Electronics Technology and Devices Lab. (United States)
Wayne H. Chang, U.S. Army Electronics Technology and Devices Lab. (United States)
A. M. Balekdjian, U.S. Army Electronics Technology and Devices Lab. (United States)
Richard T. Lareau, U.S. Army Electronics Technology and Devices Lab. (United States)
S. N. Schauer, GEO Ctr. (United States)
Fred J. Zutavern, Sandia National Labs. (United States)
Guillermo M. Loubriel, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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