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Proceedings Paper

Dark current characterization of photoconductive switches
Author(s): Jeff C. Adams; R. Aaron Falk; C. David Capps; Stuart G. Ferrier
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Paper Abstract

Dark current characterization of GaAs photoconductive switches is examined with an emphasis on low frequency current oscillations caused by travelling charge domains in the semiconductor. The voltage controlled negative differential resistance responsible for this phenomenon is due to field enhanced capture of deep level traps and is utilized for extraction of trap parameters using simple thermionic measurements. The GaAs switch investigated is of the avalanche variety and has been shown to produce current filament.ation in the on state. Since this latter effect is associated with a current controlled negative differential resistance region, we speculate on the nature of the transition between the two states.

Paper Details

Date Published: 12 May 1992
PDF: 10 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59063
Show Author Affiliations
Jeff C. Adams, Boeing Defense and Space Group (United States)
R. Aaron Falk, Boeing Defense and Space Group (United States)
C. David Capps, Boeing Defense and Space Group (United States)
Stuart G. Ferrier, Boeing Defense and Space Group (United States)

Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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