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Proceedings Paper

Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8
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Paper Abstract

We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.

Paper Details

Date Published: 22 January 2005
PDF: 9 pages
Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); doi: 10.1117/12.590564
Show Author Affiliations
Lin Pang, Univ. of California/San Diego (United States)
Maziar Nezhad, Univ. of California/San Diego (United States)
Uriel Levy, Univ. of California/San Diego (United States)
Chiaho Tsai, Univ. of California/San Diego (United States)
Yeshaiahu Fainman, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 5720:
Micromachining Technology for Micro-Optics and Nano-Optics III
Eric G. Johnson; Gregory P. Nordin; Thomas J. Suleski, Editor(s)

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