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Proceedings Paper

Three-dimensional structuring of silicon for photonic crystals with complete photonic bandgaps
Author(s): Sven Matthias; Frank Mueller; Ulrich M. Goesele
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Paper Abstract

The fabrication of three-dimensional photonic bandgap materials and the controlled incorporation of point, linear and planar defects into these crystals is a major challenge in materials research today. We show in this report that these purposes can be achieved by photoelectrochemical etching of lithographically prestructured silicon. Our advanced etching method allows the fabrication of three-dimensional photonic crystals with simple cubic symmetry. The performed calculations suggest complete bandgaps of 5% for the realized bulk structures. By lithographic prestructuring vertical line and planar defects can be induced, whereas horizontal planar defects can be created during the etching step. By combining both structuring techniques point defects can be fabricated.

Paper Details

Date Published: 13 April 2005
PDF: 11 pages
Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); doi: 10.1117/12.590551
Show Author Affiliations
Sven Matthias, Max Planck Institute of Microstructure Physics (Germany)
Frank Mueller, Max Planck Institute of Microstructure Physics (Germany)
Ulrich M. Goesele, Max Planck Institute of Microstructure Physics (Germany)

Published in SPIE Proceedings Vol. 5733:
Photonic Crystal Materials and Devices III
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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