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Proceedings Paper

Monolithic photoconductive GaAs pulser and its radiated waveform
Author(s): A. H. Kim; Robert J. Zeto; Robert J. Youmans; Maurice Weiner; George T. Tran; Louis J. Jasper; Bogoliub Lalevic
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Paper Abstract

A monolithic, photoconductive impulse generating device, in which the functions of energy storage and switching are combined into a single semi-insulating GaAs wafer substrate, was investigated under various operating conditions. Depending on the load impedance, this new type of device produced nanosecond impulses with various pulse shapes. The operation of this device with a positively mismatched load impedance (50 ohm) resulted in output voltage enhancement (voltage gain factor of 2.0) as well as fast pulse risetime (260 ps). Further, an ultra-wideband horn antenna was excited by a output pulse from this device and its radiative waveform was measured using a B-dot sensor.

Paper Details

Date Published: 1 May 1992
PDF: 11 pages
Proc. SPIE 1631, Ultrawideband Radar, (1 May 1992); doi: 10.1117/12.59047
Show Author Affiliations
A. H. Kim, U.S. Army Electronics Technology and Devices Lab. (United States)
Robert J. Zeto, U.S. Army Electronics Technology and Devices Lab. (United States)
Robert J. Youmans, U.S. Army Electronics Technology and Devices Lab. (United States)
Maurice Weiner, U.S. Army Electronics Technology and Devices Lab. (United States)
George T. Tran, Harry Diamond Labs. (United States)
Louis J. Jasper, Harry Diamond Labs. (United States)
Bogoliub Lalevic, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 1631:
Ultrawideband Radar
Ivan J. LaHaie, Editor(s)

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