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Proceedings Paper

Growth of carbon nanotubes by sublimation of silicon carbide substrates
Author(s): William C. Mitchel; John Boeckl; David Tomlin; Weijie Lu; John Rigueur; Jonathan Reynolds
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Paper Abstract

Aligned carbon nanotubes (CNT’s) have been found to form on both the Si and C faces of silicon carbide (SiC) wafers at high temperature. The CNT’s form when the SiC wafer is exposed to temperatures in the range 1400-1700°C under moderate vacuum. The CNT’s are aligned roughly parallel to the surface. After a half hour at 1700°C under vacuum of 10-4torr, a near continuous CNT layer about 250nm thick is formed. The entire surface of the SiC is covered with CNT’s including both single and multiwalled tubes, and some graphitic carbon. SEM, TEM, AFM, XPS and Raman scattering measurements have been used to analyse the CNT/SiC structures. The metal catalyst free CNT’s on SiC exhibit low density of structural defects and are very straight. The carbon source is believed to be residual carbon from the SiC left on the surface after preferential evaporation of Si. It is speculated that CNT's growth is catalysed by low concentrations of residual oxygen in the chamber during growth. The vacuum conditions can significantly affect CNT's growth. Single wall carbon nanotubes are evident in Raman spectra on the samples grown at 10-3 Torr, not on these grown at 10-5Torr.

Paper Details

Date Published: 25 March 2005
PDF: 7 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.590456
Show Author Affiliations
William C. Mitchel, Air Force Research Lab. (United States)
John Boeckl, Air Force Research Lab. (United States)
David Tomlin, Air Force Research Lab. (United States)
Weijie Lu, Fisk Univ. (United States)
John Rigueur, Fisk Univ. (United States)
Jonathan Reynolds, Fisk Univ. (United States)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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