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Proceedings Paper

Optical properties of homoepitaxial and heteroepitaxial ZnO grown by molecular beam epitaxy
Author(s): C. J. Pan; C. W. Tu; J. J. Song; G. Cantwell; C. C. Lee; B. J. Pong; G. C. Chi
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Paper Abstract

Homoepitaxial and heteroepitaxial ZnO films were grown by plasma-assisted molecular beam epitaxy (P-MBE). Homoepitaxial ZnO layers were grown on an O-face melt-grown ZnO (0001) substrate. Heteroepitaxial ZnO layers were grown on an epitaxial GaN template predeposited by metalorganic chemical vapor deposition on a c-plane sapphire substrate. There exists a residual strain in the heteroepitaxial ZnO, which is ε = -0.25%. Low-intensity excitation PL spectra of ZnO epilayers excited by a He-Cd laser exhibit only bound-exciton emission with phonon replicas. The quality of ZnO epilayers is better than that of ZnO substrate. However, under high-intensity excitation by a N2 laser, the emission due to exciton-exciton collisions dominates the PL spectrum from heteroepitaxial ZnO layer but is not observed from homoepitaxial ZnO layer.

Paper Details

Date Published: 28 April 2005
PDF: 7 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.590388
Show Author Affiliations
C. J. Pan, Univ. of California at San Diego (United States)
National Central Univ. (Taiwan)
C. W. Tu, Univ. of California at San Diego (United States)
J. J. Song, Univ. of California at San Diego (United States)
ZN-Technology, Inc. (United States)
G. Cantwell, ZN Technology, Inc. (United States)
C. C. Lee, Optical Sciences Ctr./National Central Univ. (Taiwan)
B. J. Pong, National Central Univ. (Taiwan)
G. C. Chi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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