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Proceedings Paper

Enhanced polarization-independent optical ring resonators on silicon-on-insulator
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Paper Abstract

Recently, we have realised a polarisation independent optical racetrack resonator whose resonant dips for TE and TM align to better than 1pm. The devices had a Free Spectral Range (FSR) of only several hundred picometres. This in large part was to the relatively large bend radius (~ 400μm) designed and fabricated with initial focus on producing low bend loss devices. Modelling of the bend loss of the same dimension devices shows that the bend radius can be reduced significantly (down to ~25μm) to produce race track ring resonator with an FSR that is approximately 400% larger than that of those previously fabricated, whilst retaining polarisation independence. This paper will focus on the proposed enhancement of these devices as well as the impetus for their investigation.

Paper Details

Date Published: 7 March 2005
PDF: 8 pages
Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); doi: 10.1117/12.590354
Show Author Affiliations
William Robert Headley, Univ. of Surrey (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Frederic Gardes, Univ. of Surrey (United Kingdom)
Ansheng Liu, Intel Corp. (United States)
Mario Paniccia, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5730:
Optoelectronic Integration on Silicon II
Joel A. Kubby; Ghassan E. Jabbour, Editor(s)

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