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Proceedings Paper

Characterization of thin films and stack in MOEMS structure with ellipsometry and reflectometry techniques
Author(s): Lianchao Sun; Ping Hou
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Paper Abstract

Nondestructive characterization on thin films and their stack in MOEMS device is highly desirable. But, it is often a challenging task because the area is usually small. During processing of thin films, the deposition rates, optical properties, and mechanical properties must be fully understood to fabricate a device with desired performance. With the patterned surface, deposition rate of a typical physical vapor deposition (PVD) technique, such as electron-beam evaporation and sputtering, varies at different location due to shadow effect. In this study, spectroscopic ellipsometry and reflectometry were used to characterize the optical properties of electron-evaporation thin films on a flat substrate. On the other hand, microreflectometer was used to monitor the spectrum of deposited multi-stack of optical thin films inside via-holes. Combination of these two techniques provides a practical way to qualify the processing and ensure the device performance.

Paper Details

Date Published: 22 January 2005
PDF: 7 pages
Proc. SPIE 5715, Micromachining and Microfabrication Process Technology X, (22 January 2005); doi: 10.1117/12.590309
Show Author Affiliations
Lianchao Sun, Sun International (United States)
Ping Hou, Nortel Networks Inc. (United States)

Published in SPIE Proceedings Vol. 5715:
Micromachining and Microfabrication Process Technology X
Mary-Ann Maher; Harold D. Stewart, Editor(s)

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