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Proceedings Paper

Fabrication process for low-cost GaInAsP/InP etched-facet photodetectors
Author(s): Nicolas Michel; Jacqueline Lehoux; Alexandre Marceaux; Olivier Parillaud; Nakita Vodjdani
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Paper Abstract

The optical waveguide entry facet of high-speed, 40 GHz waveguide photodetectors is usually obtained by manual cleaving, which has limited accuracy (± 10 μm) and reduces fabrication yields. In our new fabrication process, the waveguide facet is obtained with Chemically Assisted Ion Beam Etching (CAIBE). Length is therefore precisely controlled by photolithography. The antireflection coating is also deposited collectively on the whole wafer, which further reduces costs. The bandwidth of the photodiodes is 50 GHz, and their optical responsivity is 0.6 A/W at 1.55 μm wavelength. Other techniques, such as Inductively Coupled Plasma Etching (ICP), were also investigated for reducing leakage current.

Paper Details

Date Published: 11 March 2005
PDF: 8 pages
Proc. SPIE 5731, Photonics Packaging and Integration V, (11 March 2005); doi: 10.1117/12.590137
Show Author Affiliations
Nicolas Michel, Thales Research & Technology (France)
Alcatel III-V Lab. (France)
Jacqueline Lehoux, Thales Research & Technology (France)
Alcatel III-V Lab. (France)
Alexandre Marceaux, Thales Research & Technology (France)
Alcatel III-V Lab. (France)
Olivier Parillaud, Thales Research & Technology (France)
Alcatel III-V Lab. (France)
Nakita Vodjdani, Thales Research & Technology (France)
Alcatel III-V Lab. (France)


Published in SPIE Proceedings Vol. 5731:
Photonics Packaging and Integration V
Randy A. Heyler; Ray T. Chen, Editor(s)

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