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Proceedings Paper

Lifetime characterization of capacitive RF MEMS switches
Author(s): Afshin Ziaei; Thierry Dean; Jean-Philippe Polizzi
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Paper Abstract

RF MEMS switches provide a low-cost, high performance solution to many RF/microwave applications and these switches will be important building blocks for designing phase shifters, switched filters and reflector array antennas for military and commercial markets. In this paper, progress in characterizing of THALES capacitive MEMS devices under high RF power is presented. The design, fabrication and testing of capacitive RF MEMS switches for microwave/mm- wave applications on high-resistivity silicon substrate is presented. The switches tested demonstrated power handling capabilities of 1W (30 dbm) for continuous RF power. The reliability of these switches was tested at various power levels indicating that under continuous RF power. In addition a description of the power failures and their associated operating conditions is presented. The PC-based test stations to cycle switches and measure lifetime under DC and RF loads have been developed. Best-case lifetimes of 1010 cycles have been achieved in several switches from different lots under 30 dbm RF power.

Paper Details

Date Published: 22 January 2005
PDF: 9 pages
Proc. SPIE 5716, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS IV, (22 January 2005); doi: 10.1117/12.590132
Show Author Affiliations
Afshin Ziaei, Thales Research and Technology (France)
Thierry Dean, Thales Research and Technology (France)
Jean-Philippe Polizzi, Thales Research and Technology (France)


Published in SPIE Proceedings Vol. 5716:
Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS IV
Danelle M. Tanner; Rajeshuni Ramesham, Editor(s)

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