Share Email Print

Proceedings Paper

Influence of geometrical factors on angled broad-area semiconductor lasers for high-output power with good beam quality
Author(s): Chih-Hung Tsai; Yi-Shin Su; Ching-Fuh Lin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High-power semiconductor lasers with good beam quality are important for many applications. Angled broad-area waveguide structure could increase the output power and the beam quality is maintained at good quality. In this paper, we report the in-depth investigation on the geometrical factors that influence the performance of angled broad-area semiconductor lasers. The angled broad-area laser diodes are based on InGaAsP/InP materials. The waveguide is oriented at an angle from the normal of the cleaved facets. Our investigation shows that the waveguide width, the device length, and the tilted angle have to follow a certain relation in order to have the light propagate along a zigzag path inside the broad-area waveguide. When such a mode oscillates, the output light emits along the normal of the cleaved facet, showing no filamentation. Over 1 W of output power can be obtained with a good beam quality. Our investigation also discovers that devices with 100μm waveguide width perform better than devices with 50μm waveguide width.

Paper Details

Date Published: 1 April 2005
PDF: 10 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.589766
Show Author Affiliations
Chih-Hung Tsai, National Taiwan Univ. (Taiwan)
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

© SPIE. Terms of Use
Back to Top