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Proceedings Paper

Ultrabroad-bandwidth and high-power superluminescent light emitting diodes
Author(s): Jingyi Wang; Lisa Tongning Li; Wenchao Xu; Rongwen Yu; Jothilingam Ramalingam; Zhenghua Wu; Weiming Zhu; Xun Li
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Paper Abstract

A unique design approach was proposed and applied to fabricate in a single chip ultra broad bandwidth and high power Superluminescent Emitting Diodes (SLEDs) at 820 nm, 1300 nm and 1550 nm windows. More than 2.5 mW, 20 mW, and 5mW of output power with a bandwidth of more than 50nm, 80 nm and 100 nm have been obtained for 820 nm, 1300 nm and 1550 nm wavelength windows, respectively. The devices were evaluated for optical coherence domain reflectometry (OCDR) and optical coherence tomography (OCT) applications, and coherence function data is quite good with a coherence measurement out to 10 mm with negligible artifacts.

Paper Details

Date Published: 13 April 2005
PDF: 9 pages
Proc. SPIE 5690, Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine IX, (13 April 2005); doi: 10.1117/12.589624
Show Author Affiliations
Jingyi Wang, InPhenix, Inc. (United States)
Lisa Tongning Li, InPhenix, Inc. (United States)
Wenchao Xu, InPhenix, Inc. (United States)
Rongwen Yu, InPhenix, Inc. (United States)
Jothilingam Ramalingam, InPhenix, Inc. (United States)
Zhenghua Wu, InPhenix, Inc. (United States)
Weiming Zhu, InPhenix, Inc. (United States)
Xun Li, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 5690:
Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine IX
Valery V. Tuchin; Joseph A. Izatt; James G. Fujimoto, Editor(s)

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