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Proceedings Paper

Ultrafast intersubband relaxation in GaN/AlN MQWs (Invited Paper)
Author(s): Junichi Hamazaki; Keita Ikuno; Hikaru Takahashi; Hideyuki Kunugita; Kazuhiro Ema; Akihiko Kikuchi; Katsumi Kishino
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Paper Abstract

We have investigated the ultrafast relaxation dynamics of intersubband transition (ISBT) in GaN/AlN, using a two-color pump-probe technique, in a wide energy range around the optical communication wavelength. We suggest that the origin of the signal depends on the relation between the pump and probe pulse energies. We have observed an ultrafast induced absorption signal and a slow negative component which are due to the absorption of electrons during intra-subband scattering and a carrier cooling process with a hot-phonon effect, respectively. Moreover, we clarify the origin of the inhomogeneous broadening width of the ISBT and of the intrinsic absorption width of ISBT from the detailed analyses of the result. We have reproduced the relaxation dynamics by a numerical calculation to confirm this interpretation of ISBT relaxation dynamics.

Paper Details

Date Published: 13 April 2005
PDF: 10 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.589568
Show Author Affiliations
Junichi Hamazaki, Sophia Univ. (Japan)
Keita Ikuno, Sophia Univ. (Japan)
Hikaru Takahashi, Sophia Univ. (Japan)
Hideyuki Kunugita, Sophia Univ. (Japan)
Kazuhiro Ema, Sophia Univ. (Japan)
Akihiko Kikuchi, Sophia Univ. (Japan)
Katsumi Kishino, Sophia Univ. (Japan)


Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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