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Proceedings Paper

Ultra-thin multi-element Si pin photodiode arrays for medical imaging applications
Author(s): Bernd Tabbert; Christopher Hicks; Ed Bartley; Hong Wu; Richard Metzler; Alexander O. Goushcha
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Paper Abstract

Results of comparative studies of opto-electrical properties of photodiode arrays built on 30-um, 75-um, and 100-um thick single Silicon dies are presented. The size of the square pixels varied from 1.5 mm to 250-um for different arrays with the gaps between adjacent elements as small as 20 um. The internal quantum efficiency was close to 100%, DC and AC cross talks were smaller than 0.01% within the spectral range 400 to 800 nm. The arrays were characterized with very low leakage currents and high shunt resistance - above 1 GΩhm. The features of the array structure are discussed for the first time.

Paper Details

Date Published: 7 April 2005
PDF: 9 pages
Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.589486
Show Author Affiliations
Bernd Tabbert, Semicoa (United States)
Christopher Hicks, Semicoa (United States)
Ed Bartley, Semicoa (United States)
Hong Wu, Semicoa (United States)
Richard Metzler, Semicoa (United States)
Alexander O. Goushcha, Semicoa (United States)


Published in SPIE Proceedings Vol. 5726:
Semiconductor Photodetectors II
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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