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Proceedings Paper

High-power 1060-nm InGaAs/GaAs single-mode laser diodes
Author(s): Wei Gao; Andre Mastrovito; Kejian Luo; Lisen Cheng; Alan Nelson; Tom Yang; Zuntu Xu
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Paper Abstract

High power, 1060 nm, InGaAs/GaAs/AlGaAs graded-index, separate-confinement (GRINSCH), strained single quantum-well (SQW), single mode (SM) laser diodes grown by Metal-Organic Chemical-Vapor Deposition (MOCVD) are reported. The high quality quantum well with high strain, which is the key issue to make high performance 1060 nm laser diode, was obtained by optimizing growth conditions. For realizing SM lasers and modules, the ridge-waveguide lasers with 5 um width and 1500 μm cavity length are successfully fabricated and mounted epitaxial-side up onto AlN submounts using eutectic Au80Sn20 solder to allow easy access to the emission region for fiber coupling and to minimize the effects of die bonding stress on the ridge. These devices exhibit threshold current of less than 30 mA, slope efficiency of up to 1.0 W/A and high kink-free power of 500 mW at 25°C. The devices that were subjected to long-term aging test at 85°C, operating at 300 mW, first show very good reliability. The coupled module with more than 70% fiber coupling efficiency and more than 200 mW output power from a single mode fiber or polarization maintained (PM) fiber in 14-pin butterfly case is demonstrated.

Paper Details

Date Published: 17 March 2005
PDF: 8 pages
Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005); doi: 10.1117/12.588772
Show Author Affiliations
Wei Gao, Axcel Photonics, Inc. (United States)
Andre Mastrovito, Axcel Photonics, Inc. (United States)
Kejian Luo, Axcel Photonics, Inc. (United States)
Lisen Cheng, Axcel Photonics, Inc. (United States)
Alan Nelson, Axcel Photonics, Inc. (United States)
Tom Yang, Axcel Photonics, Inc. (United States)
Zuntu Xu, Axcel Photonics, Inc. (United States)


Published in SPIE Proceedings Vol. 5711:
High-Power Diode Laser Technology and Applications III
Mark S. Zediker, Editor(s)

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