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Proceedings Paper

Surface waves in 2D photonic macroporous silicon structures
Author(s): Lyudmyla A. Karachevtseva; Olexandr Glushko; Mikola I. Karas; Volodimir Onishchenko
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Paper Abstract

Effects of increase in absorption of electromagnetic radiation, enhancement of photoconductivity and surface wave formation in 2D photonic macroporous silicon were investigated. Dependence of photoconductivity on a corner of the falling of the electromagnetic radiation, prevalence of absorption over reflection of light, as well as enhancement of the photoconductivity in comparison with the monocrystalline silicon testify to formation of surface waves (surface polaritons) in illuminated macroporous silicon structures. For wavelengths less than optical period of macropores there is an essential reduction in transmittance of electromagnetic radiation to (2-3)•10-2 (in comparison with the homogeneous material) and the polaritonic band formation. Conformity of spectra of photoconductivity of macroporous silicon to spectra of intrinsic photoconductivity of monocrystal silicon testifies the enrichment of a macropore surface by photocarriers and formation of a surface electromagnetic wave of plasmon type. Elecrtroreflectance spectroscopy of macroporous silicon surface showed an intrinsic electric field near 106 V/cm due to positive charge built in oxide layer on the walls of the macropores. Thus, electronic gas is quantified in a surface layer of the macroporous silicon structure. Polariton frequencies in long-wave part of the macroporous silicon optical transmittance are commensurable with experimental values of the surface plasmon frequency in the two dimensional electronic gas on Si-SiO2 boundary.

Paper Details

Date Published: 13 April 2005
PDF: 11 pages
Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); doi: 10.1117/12.588719
Show Author Affiliations
Lyudmyla A. Karachevtseva, V. Lashkariov Institute of Semiconductor Physics (Ukraine)
Olexandr Glushko, V. Lashkariov Institute of Semiconductor Physics (Ukraine)
Mikola I. Karas, V. Lashkariov Institute of Semiconductor Physics (Ukraine)
Volodimir Onishchenko, V. Lashkariov Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 5733:
Photonic Crystal Materials and Devices III
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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