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Proceedings Paper

Tunneling injection quantum dot lasers
Author(s): Shun-Lien Chuang; Piotr Konrad Kondratko; Jungho Kim; Gabriel Walter; Nick Holonyak; R Heller; X. Zhang; R. Dupuis
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Paper Abstract

We investigate tunneling injection quantum-dot (QD) lasers both theoretically and experimentally. Our laser structure consists of two tensile-strained quantum wells (QWs) coupled to a compressive-strained QD layer. The QWs serve as efficient carrier collectors and as a medium to inject electrons into the QDs by tunelling. Polarization-resolved amplified spontaneous emission (ASE) spectroscopy is used to extract the transverse-electric (TE) and transverse-magnetic (TM) polarized optical gain spectra at very low to near threshold injection currents. At a low bias current, the TE polarized ASE from the ground state of the QD layer is observed. At an intermediate current level, the coupling of the QW ground state to the QD excited state becomes important and an increase of the TM polarized emission from the tensile-strained QWs at a higher energy level becomes significant. Near threshold current, we observe TE gain narrowing due to the QD excited-state activation and the pinning of TM gain with subsequent TE lasing above threshold. We explain the physics of tunneling injection from the QWs into the QDs and how the tunneling injection affects the polarization resolved optical gain spectra as the injection current level increases.

Paper Details

Date Published: 1 April 2005
PDF: 8 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.588581
Show Author Affiliations
Shun-Lien Chuang, Univ. of Illinois/Urbana-Champaign (United States)
Piotr Konrad Kondratko, Univ.of Illinois/Urbana-Champaign (United States)
Jungho Kim, Univ.of Illinois/Urbana-Champaign (United States)
Gabriel Walter, Univ. of Illinois/Urbana-Champaign (United States)
Nick Holonyak, Univ. of Illinois/Urbana-Champaign (United States)
R Heller, Univ. of Texas/Austin (United States)
X. Zhang, Univ. of Texas/Austin (United States)
R. Dupuis, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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