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Proceedings Paper

Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors
Author(s): S.-W. Lee; C. J. Park; T. W. Kang; H. Y. Cho; K. Hirakawa
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Paper Abstract

We have investigated the photocurrent spectra of lateral conduction self-assembled Ge/Si quantum dots (QDs) infrared photodetector structure. We have observed a broad mid-infrared photocurrent spectrum in photon energy range of 120-400 meV (λ~3-10 μm) due to bound-to-bound as well as bound-to-continuum intersubband transition of normal incidence radiation in the valence band of self-assembled Ge QDs and subsequent lateral transport of photoexcited carriers in the Si/SiGe two-dimensional channel. The peak responsivity was as high as 134 mA/W at photon energy of 240 meV (λ~5.2 μm) at T=10 K and Vb=8 V.

Paper Details

Date Published: 7 April 2005
PDF: 7 pages
Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.588445
Show Author Affiliations
S.-W. Lee, Dongguk Univ. (South Korea)
C. J. Park, Dongguk Univ. (South Korea)
T. W. Kang, QRSC (South Korea)
H. Y. Cho, QRSC (South Korea)
K. Hirakawa, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 5726:
Semiconductor Photodetectors II
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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