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Proceedings Paper

The impact of high-k dielectrics in nanocrystal flash memories
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Paper Abstract

The consequences of the use of high-k dielectrics in nanocrystal based non-volatile flash memories focusing on the electrical and electronic properties are investigated through computational simulations. In the light of these results, we discuss several aspects which must be addressed for the design of such devices. We focus on nanocrystals flash memories with HfO2 and SiO2 for analysis. Due to significant reductions of the single-electron tunneling time and improvements on the data retention, high-k dielectrics offers important improvements for the non-volatile flash memories technology.

Paper Details

Date Published: 25 March 2005
PDF: 9 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.588362
Show Author Affiliations
Valder N. Freire, Univ. Federal do Ceara (Brazil)
Jeanlex S. de Sousa, Univ. Federal do Ceara (Brazil)

Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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