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Proceedings Paper

GaSb-based 1.9- to 2.4-μm quantum well diode lasers with low-beam divergence
Author(s): Marcel Rattunde; Eva Geerlings; Johannes Schmitz; Gudrun Kaufel; Juergen Weber; Michael Mikulla; Joachim Wagner
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Paper Abstract

We present results on low beam divergence, low threshold current GaSb-based quantum-well diode lasers emitting in the 1.9 - 2.4 μm wavelength range. By carefully designing the active quantum-well region, low threshold current densities in the range of 148 to 190 A/cm2 could be achieved in the entire wavelength range. A novel structure for the epitaxial waveguide was designed and realized experimentally, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. This improvement was achieved without any sacrifice in the laser performance, i.e. the novel laser structure showed the same threshold current and differential quantum effciency as the standard one. Ridge-waveguide lasers employing the new waveguide design and emitting at 2.3 μm were operated in an external cavity configuration. Due to the improved coupling effciency of the laser beam into the collimating optic, a wide tuning range of 130nm could be achieved, limited only by the gain bandwidth of the active material.

Paper Details

Date Published: 1 April 2005
PDF: 8 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.588203
Show Author Affiliations
Marcel Rattunde, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Eva Geerlings, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Johannes Schmitz, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Gudrun Kaufel, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Juergen Weber, m2kLaser GmbH (Germany)
Michael Mikulla, m2kLaser GmbH (Germany)
Joachim Wagner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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