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Proceedings Paper

Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence
Author(s): Chia-Yang Chen; Chun-Jung Lin; Hao-Chung Kuo; Gong-Ru Lin; Yu-Lun Chueh; Li-Jen Chou; Chih-Wei Chang; Eric Wei-Guang Diau
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Paper Abstract

The optimized N2O fluence for plasma enhanced chemical vapor deposition (PECVD) growing silicon-rich substoichiometric silicon oxide (SiOx) with buried Si nanocrystals is demonstrated. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx thin films grown by PECVD with N2O fluence varying from 105 to 130 sccm. After annealing from 15 to 180 min, a 22-nm-redshift of the PL has been detected. The maximum PL intensity is observed for the 30-min annealed SiOx growing at N2O fluence at 120 sccm. Larger N2O fluence and longer annealing time causes a PL blueshift by 65 nm and 20 nm, respectively. Such a blueshift is attributed to shrinkage in the size of the Si nanocrystals under the participation of dissolved oxygen atoms from N2O. The (220)-oriented Si nanocrystals with radius ranging from 4.4 to 5.0 nm are determined. The luminescent lifetimes lengthens from 20 μs to 52 μs as the nc-Si size extends from 4.0 to 4.2 nm. Optimal annealing times for SiOx preparing at different N2O fluences and an optimum N2O fluence of 120 sccm are reported. Serious oxidation effect at larger N2O fluence condition is observed, providing smaller PL intensity at shorter wavelengths. In contrast, the larger size nc-Si will be precipitated when N2O fluence becomes smaller, leading to a weaker PL at longer wavelength. These results provide the optimized growth condition for the Si-rich SiO2 with buried Si nanocrystals.

Paper Details

Date Published: 12 April 2005
PDF: 8 pages
Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.587997
Show Author Affiliations
Chia-Yang Chen, National Chiao Tung Univ. (Taiwan)
Chun-Jung Lin, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Gong-Ru Lin, National Chiao Tung Univ. (Taiwan)
Yu-Lun Chueh, National Tsing Hua Univ. (Taiwan)
Li-Jen Chou, National Tsing Hua Univ. (Taiwan)
Chih-Wei Chang, National Chiao Tung Univ. (Taiwan)
Eric Wei-Guang Diau, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5713:
Photon Processing in Microelectronics and Photonics IV
Jim Fieret; Peter R. Herman; Tatsuo Okada; Craig B. Arnold; David B. Geohegan; Frank Träger; Jan J. Dubowski; Friedrich G. Bachmann; Willem Hoving; Kunihiko Washio; Yongfeng Lu, Editor(s)

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