Share Email Print

Proceedings Paper

Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
Author(s): Chi-Kuan Lin; Gong-Ru Lin; Chun-Jung Lin; Hao-Chung Kuo; Chia-Yang Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon defect and nanocrystal related white and red electroluminescences (EL) of Si-rich SiO2 based on metal-oxide-semiconductor (MOS) diode using transparent electrode contact are reported. The 500nm-thick Si-rich SiO2 film on n-type Si substrate is synthesized using multi-recipe Si-ion-implantation or plasma enhanced chemical vapor deposition (PECVD). After 1100°C annealing for 3 hrs, the PL of Si-ion-implanted sample at 415 nm and 455 nm contributed by the weak-oxygen bond and neutral oxygen vacancy defects is observed. The white-light EL spectrum was observed at reverse bias, which originates from the tunneling and recombination intermediate state of SiO2:Si+ at a threshold current and voltage of 1.56 mA and 9.6 V, respectively. The maximum EL power of 110 nW is obtained at biased voltage of 25 V. The linear relationship between the optical power and injection current with a corresponding slope of 2.16 uW/A is obtained. The 4-nm nanocrystallite silicon (nc-Si) is precipitated in the 240nm-thick PECVD grown silicon-rich SiO2 film annealed at 1100°C for 30 min with Indium-tin-oxide (ITO) of 0.8 mm in diameter, which contributes PL at 760 nm. The peak wavelength of the EL spectra coincides well with the PL. The threshold current and voltage are 86 V and 1.08 uA, respectively. The power-current (P-I) slope is determined as 697 uW/A. The carrier injection mechanism is dominated by Fowler-Nordheim(F-N) tunneling.

Paper Details

Date Published: 4 April 2005
PDF: 8 pages
Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); doi: 10.1117/12.587978
Show Author Affiliations
Chi-Kuan Lin, National Chiao Tung Univ. (Taiwan)
Gong-Ru Lin, National Chiao Tung Univ. (Taiwan)
Chun-Jung Lin, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Chia-Yang Chen, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5734:
Quantum Dots, Nanoparticles, and Nanoclusters II
Diana L. Huffaker; Pallab K. Bhattacharya, Editor(s)

© SPIE. Terms of Use
Back to Top