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Proceedings Paper

Properties of violet laser diodes grown on bulk GaN substrates
Author(s): Piotr Perlin; Lucja Marona; Tomasz Swietlik; Michal Leszczynski; Pawel Prystawko; Przemyslaw Wisniewski; Robert Czernecki; Gijs Franssen; Szymon Grzanka; Grzegorz Kamler; Jola Borysiuk; Janusz Weyher; Izabella Grzegory; Tadeusz Suski; Sylwester Porowski; Till Riemann; Jurgen Christen
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Paper Abstract

High pressure grown GaN bulk crystals, because of their low defect density, are atractive for the use as substrates for blue-violet laser diode fabrication. These laser diodes are characterized by a low density of dislocations (8×104-1×105 cm-2) and thus they possibly have the best crystalline quality ever reported for this type of nitride devices. Previously, we demonstrated that these lasers are able to emit a very high optical power under pulse operation. In the present paper we will demonstrate the details of their room temperature CW operation, giving good prognostics for the further development of these devices. Preliminary estimation of the internal losses indicated a very low internal absorption in the range of 5 cm-1. The characterization of the aged devices did not reveal any dark lines or facet degradation. A correlation between the device lifetime and p-type layers growth methods will be suggested here.

Paper Details

Date Published: 1 April 2005
PDF: 8 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.587040
Show Author Affiliations
Piotr Perlin, Institute of High Pressure Physics, Unipress (Poland)
TopGaN Ltd. (Poland)
Lucja Marona, Institute of High Pressure Physics, Unipress (Poland)
Tomasz Swietlik, Institute of High Pressure Physics, Unipress (Poland)
Michal Leszczynski, Institute of High Pressure Physics, Unipress (Poland)
TopGaN Ltd. (Poland)
Pawel Prystawko, Institute of High Pressure Physics, Unipress (Poland)
Przemyslaw Wisniewski, Institute of High Pressure Physics, Unipress (Poland)
Robert Czernecki, TopGaN Ltd. (Poland)
Gijs Franssen, Institute of High Pressure Physics, Unipress (Poland)
Szymon Grzanka, Institute of High Pressure Physics, Unipress (Poland)
Grzegorz Kamler, Institute of High Pressure Physics, Unipress (Poland)
Jola Borysiuk, Institute of High Pressure Physics, Unipress (Poland)
Janusz Weyher, Institute of High Pressure Physics, Unipress (Poland)
Izabella Grzegory, Institute of High Pressure Physics, Unipress (Poland)
TopGaN Ltd. (Poland)
Tadeusz Suski, Institute of High Pressure Physics, Unipress (Poland)
Sylwester Porowski, Institute of High Pressure Physics, Unipress (Poland)
Till Riemann, Otto-von-Guericke-Univ. Magdeburg (Germany)
Jurgen Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)


Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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