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Proceedings Paper

InGaAsN/GaAs lasers: high performance and long lifetime
Author(s): C. S. Peng; Janne Konttinen; Tomi Jouhti; Markus Pessa
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Paper Abstract

High power and single mode InGaAsN ridge waveguide lasers were developed. The pulsed the maximum output power was 240 mW at room temperature (RT). The threshold was 15 mA at 20°C. The ridge waveguide laser could work beyond 120°C. For cw operation, the lasers show a maximum output up to 40 mW RT. The broad area lasers using the same materials has been working under continuous-wave operation at constant current (80% of maximum output) for more than 42,800 device-hours at 30°C with as-cleaved facets. They are still working well.

Paper Details

Date Published: 1 April 2005
PDF: 6 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.586658
Show Author Affiliations
C. S. Peng, Tampere Univ. of Technology (Finland)
Janne Konttinen, Tampere Univ. of Technology (Finland)
Tomi Jouhti, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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