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Proceedings Paper

Direct laser doping of various materials
Author(s): Valentin Craciun; Ion N. Mihailescu; G. N. Mikhailova; A. S. Seferov; Mario Bertolotti; A. Ferrari; Armando Luches; Gilberto Leggieri; Maurizio Martino
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Paper Abstract

Laser doping method has an attractive set of important advantages, very useful for microelectronics applications. Using this method we have obtained shallow and heavily doped p+ - n junctions, ohmic contacts, and interconnection lines. We have extended our laser method for Ti in-diffusion into LiNbO3, the common technique for optical waveguides fabrication.

Paper Details

Date Published: 1 April 1992
PDF: 5 pages
Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58657
Show Author Affiliations
Valentin Craciun, Institute of Atomic Physics (Romania)
Ion N. Mihailescu, Institute of Atomic Physics (Romania)
G. N. Mikhailova, Institute of General Physics (Russia)
A. S. Seferov, Institute of General Physics (Russia)
Mario Bertolotti, Univ. `La Sapienza` (Italy)
A. Ferrari, Univ. `La Sapienza` (Italy)
Armando Luches, Univ. of Lecce (Italy)
Gilberto Leggieri, Univ. of Lecce (Italy)
Maurizio Martino, Univ. of Lecce (Italy)


Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces

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