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Proceedings Paper

Femtosecond laser diagnostics of ultrafast laser-induced melting of the GaAs surface
Author(s): Sergei V. Govorkov; Vladimir I. Emel'yanov; I. L. Shumay; Wolfgang Rudolph; Thomas Schroeder
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Paper Abstract

We report here the experimental results on the SHG and linear reflectivity studies of the dynamics of laser-induced melting of a GaAs surface layer under subpicosecond pulsed laser excitation. We find that the SH intensity drops in a time less than 100 fs after excitation, while the linear reflectivity reaches a value characteristic of molten GaAs on a time scale of about 1 ps. Thus, the experimental results unambiguously indicate that ultra-fast phase transition to a new solid phase with structural properties different both from that of initial material and that of molten GaAs takes place in the surface layer under strong femtosecond laser excitation. This transition occurs on a time scale of 100 fs which is about an order of magnitude less than the time required for the electron relaxation to the bottom of the conduction band.

Paper Details

Date Published: 1 April 1992
PDF: 6 pages
Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58640
Show Author Affiliations
Sergei V. Govorkov, Moscow State Univ. (Russia)
Vladimir I. Emel'yanov, Moscow State Univ. (Russia)
I. L. Shumay, Moscow State Univ. (Russia)
Wolfgang Rudolph, Friedrich-Schiller-Univ. (Germany)
Thomas Schroeder, Friedrich-Schiller-Univ. (Germany)


Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces

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