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Proceedings Paper

Effect of bulk doping on the etching rate of silicon by halogen atoms
Author(s): Andrey I. Krechetov
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Paper Abstract

The concept of field-assisted etching is developed. Numerical solution is obtained for the equilibrium flux of negative halogen ions through a thin (h ≤ 10 Å) buffer layer of reaction onto the surface of silicon of various bulk dopings. Results of the numerical simulation are compared with the experimental data.

Paper Details

Date Published: 1 April 1992
PDF: 7 pages
Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58630
Show Author Affiliations
Andrey I. Krechetov, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces

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