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Proceedings Paper

Dynamics of silicon etching in chlorine-containing gases induced by pulsed excimer laser radiation
Author(s): A. V. Kuzmichov; Vladimir G. Ageev; Vitali I. Konov
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Paper Abstract

Recent results obtained in our group on double pulse KrF (248 nm) excimer laser etching of silicon in Cl-containing gases are summarized and discussed in context of previous studies. The reaction of Si [111] with Cl2 and CCl4 under the action of KrF laser radiation using a new double pulse technique has been investigated. The reaction and adsorption times were determined for both gases under high pressure conditions (1-100 Torr). The proposed tandem pulse technique with a variable delay between pulses can be used to explore the gas-surface interaction parameters of deposition as well as etching processes.

Paper Details

Date Published: 1 April 1992
PDF: 6 pages
Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58629
Show Author Affiliations
A. V. Kuzmichov, General Physics Institute (Russia)
Vladimir G. Ageev, General Physics Institute (Russia)
Vitali I. Konov, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces

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