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Proceedings Paper

Titanium nitride: titanium silicide structures obtained by multipulse excimer laser irradiation
Author(s): Emilia D'Anna; M. L. De Giorgi; Armando Luches; Maurizio Martino; Valentin Craciun; Ion N. Mihailescu; Paolo Mengucci
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Paper Abstract

We synthesized stable and adherent TiSi2 layers by one-step excimer-laser irradiation of Ti films deposited on Si wafers. By multipulse laser irradiation a regime was got when Ti covering Si windows, opened into SiO2 layer grown on the Si substrate, was completely reacted, while the neighbour Ti covering the SiO2 interlayer was entirely expelled. This means that a self-aligned silicide layer (salicide) was formed. Moreover, it is shown that by mulitpulse irradiation of Ti/Si samples in nitrogen atmosphere, it is possible to obtain multilevel TiN/TiSi2/Si structures with titanium silicide formed at the Ti-Si interface and titanium nitride formed at the Ti surface.

Paper Details

Date Published: 1 April 1992
PDF: 7 pages
Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58628
Show Author Affiliations
Emilia D'Anna, Univ. of Lecce (Italy)
M. L. De Giorgi, Univ. of Lecce (Italy)
Armando Luches, Univ. of Lecce (Italy)
Maurizio Martino, Univ. of Lecce (Italy)
Valentin Craciun, Institute of Atomic Physics (Romania)
Ion N. Mihailescu, Institute of Atomic Physics (Romania)
Paolo Mengucci, Univ. of Ancona (Italy)

Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces
Nikolai I. Koroteev; Vladislav Ya. Panchenko, Editor(s)

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