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Proceedings Paper

Control of spectrum of laser-induced periodical relief on GaAs surface in photochemical etching
Author(s): Alexander I. Khudobenko; Vladislav Ya. Panchenko; Vladimir K. Popov; Vladimir N. Seminogov
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Paper Abstract

The process of periodic structure formation on the GaAs surface by laser induced wet etching has been investigated. The exponential growth rates of the structures were measured in situ for the first time. The influence of the various etchants on the relief spectrum has been studied. Phased diffraction gratings with controled periods in 0.35-0.5 μm range have been obtained. The physical mechanism of this phenomena was established by the comparison of the theoretical and experimental results.

Paper Details

Date Published: 1 April 1992
PDF: 7 pages
Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58627
Show Author Affiliations
Alexander I. Khudobenko, Scientific Research Ctr. for Technological Lasers (Russia)
Vladislav Ya. Panchenko, Scientific Research Ctr. for Technological Lasers (Russia)
Vladimir K. Popov, Scientific Research Ctr. for Technological Lasers (Russia)
Vladimir N. Seminogov, Scientific Research Ctr. for Technological Lasers (Russia)


Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces

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