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Proceedings Paper

Laser doping of germanium
Author(s): T. J. Mahaney; Andrey V. Muravjov; Maxim V. Dolguikh; Thomas Andrew Winningham; Robert E. Peale; Zhaoxu Tian; Sachin Bet; Aravinda Kar; Mikhail Klimov
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Paper Abstract

A direct-write pulsed Nd:yttrium-aluminum-garnet laser treatment in an aluminum-containing gas was applied to the polished surface of an undoped Ge wafer. After KOH etching to remove metallic aluminum deposited on the surface, secondary ion mass spectroscopy (SIMS) revealed ~60-200 nm penetration for Al at a concentration of ~1017 cm-3. Atomic force microscopy showed that surface roughness is much less than the measured penetration depth. Laser doping of Ge is a potential low cost, selective-area, and compact method, compared with ion-implantation, for production of high current ohmic contacts in Ge and SiGe opto-electronic devices.

Paper Details

Date Published: 12 April 2005
PDF: 7 pages
Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.585470
Show Author Affiliations
T. J. Mahaney, Univ. of Central Florida (United States)
Andrey V. Muravjov, Univ. of Central Florida (United States)
Maxim V. Dolguikh, Univ. of Central Florida (United States)
Thomas Andrew Winningham, Univ. of Central Florida (United States)
Robert E. Peale, Univ. of Central Florida (United States)
Zhaoxu Tian, CREOL/Univ. of Central Florida (United States)
Sachin Bet, CREOL/Univ. of Central Florida (United States)
Aravinda Kar, CREOL/Univ. of Central Florida (United States)
Mikhail Klimov, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 5713:
Photon Processing in Microelectronics and Photonics IV
Jim Fieret; David B. Geohegan; Friedrich G. Bachmann; Willem Hoving; Frank Träger; Peter R. Herman; Jan J. Dubowski; Tatsuo Okada; Kunihiko Washio; Yongfeng Lu; Craig B. Arnold, Editor(s)

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