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Proceedings Paper

Multidimensional noise model and simulation of VCSEL devices
Author(s): Stefan Odermatt; Mathieu Luisier; Bernhard Schmithuesen; Matthias Streiff; Rainer Hovel; Bernd Witzigmann
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Paper Abstract

A novel spatially distributed noise model is used in a device simulator in order to describe relative intensity noise and frequency noise for semiconductor lasers. For charge carrier transport, continuity and Poisson equations are used and self-heating is considered by a thermodynamic equation. Spontaneous and stimulated recombination are calculated in the framework of the semiconductor Bloch equations using the second Born approximation to include many-body effects. The optical field is expanded into modes. The temporal behavior is described by a photon rate and a photon phase equation for each mode. Noise is taken into account by spatially distributed Langevin forces. The correlation functions are described directly in the frequency domain assuming small signal noise sources. All relevant equations are solved in a fully self-consistent fashion. Comparison of static characteristics and dynamic characteristics, such as relative intensity noise, with measurements show excellent agreement for a vertical-cavity surface-emitting laser (VCSEL).

Paper Details

Date Published: 28 April 2005
PDF: 10 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.584902
Show Author Affiliations
Stefan Odermatt, ETH Zuerich (Switzerland)
Mathieu Luisier, ETH Zuerich (Switzerland)
Bernhard Schmithuesen, ETH Zuerich (Switzerland)
Matthias Streiff, ETH Zuerich (Switzerland)
Rainer Hovel, Avalon Photonics Ltd. (Switzerland)
Bernd Witzigmann, ETH Zuerich (Switzerland)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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