Share Email Print
cover

Proceedings Paper

Adaptive control of ion beams produced by ultrafast laser ablation of silicon
Author(s): Razvan Stoian; Nadezhda M. Bulgakova; Alexandre Mermillod-Blondin; Arkadi Rosenfeld; Maria Spyridaki; Emmanuel Koudoumas; Costas Fotakis; Ingolf V. Hertel
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In a context where ultrafast lasers have become ideal tools for material probing and processing we present various concepts for process control and optimization. Temporal tailoring of ultrashort laser pulses enables synergies between radiation and material and, therefore, new opportunities for optimal processing of materials. The concept of optimizing laser interactions is based on the possibility to adjust energy delivery so that control of laser-induced processes can be achieved and particular states of matter can be accessed. We present recent results related to the implementation of adaptive feedback loops based on temporal shaping of ultrafast laser pulses to control laser-induced phenomena for practical applications. The chosen example indicates the possibility to manipulate the kinetic properties of ions emitted from ultrafast laser irradiated semiconducting samples, using excitation sequences synchronized with the phase-transformation characteristic times. Versatile sub-keV ion beams are obtained exploiting transitions to supercritical fluid states with minimal energetic expenses, while achieving very efficient energy coupling and thermodynamic paths towards highly volatile states. Temporally selective irradiation can thus open up efficient thermodynamic paths towards critical points, delivering at the same time an extended degree of control in material processing.

Paper Details

Date Published: 13 April 2005
PDF: 15 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.584735
Show Author Affiliations
Razvan Stoian, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Lab. TSI, CNRS, Univ. Jean Monnet (France)
Nadezhda M. Bulgakova, Institute of Thermophysics (Russia)
Alexandre Mermillod-Blondin, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Lab. TSI, CNRS, Univ. Jean Monnet (France)
Arkadi Rosenfeld, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Maria Spyridaki, Foundation for Research and Technology-Hellas (Greece)
Emmanuel Koudoumas, Foundation for Research and Technology-Hellas (Greece)
Costas Fotakis, Foundation for Research and Technology-Hellas (Greece)
Ingolf V. Hertel, Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany)


Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

© SPIE. Terms of Use
Back to Top