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Proceedings Paper

Recombination dynamics of localized biexcitons in AlGaN ternary alloys
Author(s): Yoichi Yamada
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Paper Abstract

Excitonic optical properties of Ga-rich AlxGa1-xN ternary alloy epitaxial layers are reviewed on the basis of our recent experimental observations. Photoluminescence due to radiative recombination of biexcitons was clearly observed from the ternary alloys with different aluminum compositions (x=0.019 ~ 0.15). Recombination dynamics of excitons and biexcitons was studied by means of time-resolved photoluminescence spectroscopy. The effect of localization due to alloy disorder on biexcitons was also studied by means of photoluminescence excitation spectroscopy. A Stokes shift of biexcitons was defined experimentally on the basis of two-photon absorption of biexcitons in order to evaluate the degree of biexciton localization quantitatively. A binding energy of biexcitons was determined as a function of aluminum composition. The biexciton localization due to alloy disorder resulted in a strong enhancement of the biexciton binding energy.

Paper Details

Date Published: 13 April 2005
PDF: 9 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.584725
Show Author Affiliations
Yoichi Yamada, Yamaguchi Univ. (Japan)

Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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