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Proceedings Paper

Internal device physics of 1.3-µm vertical-cavity surface-emitting laser
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Paper Abstract

We report on the simulation of 1.32μm vertical-cavity surface-emitting lasers (VCSELs). The device comprises a tunnel junction for current and optical confinement and features intra-cavity ring contacts. Distributed Bragg reflectors (DBRs) in the GaAs/AlGaAs material system form the optical cavity and are wafer-bonded to InP-based spacers. The active region consists of five InAlGaAs quantum wells (QW). For the simulations, a thermodynamic transport model is used for electrical and thermal calculations while the optical modes are computed by solving the vectorial Helmholtz equation with an finite element (FE) solver. Calibrations show good agreement with measurements and on this basis, electrical benefits of the TJ are studied. Moreover, the physics of thermal rollover are analyzed.

Paper Details

Date Published: 14 March 2005
PDF: 10 pages
Proc. SPIE 5737, Vertical-Cavity Surface-Emitting Lasers IX, (14 March 2005); doi: 10.1117/12.584571
Show Author Affiliations
Beat Hangartner, ETH Zurich (Switzerland)
Univ. of California/Santa Barbara (United States)
Joachim Piprek, Univ. of California/Santa Barbara (United States)
Matthias Streiff, ETH Zurich (Switzerland)
Stefan Odermatt, ETH Zurich (Switzerland)
Bernd Witzigmann, ETH Zurich (Switzerland)
Andreas Witzig, Synopsys Switzerland Ltd. (Switzerland)

Published in SPIE Proceedings Vol. 5737:
Vertical-Cavity Surface-Emitting Lasers IX
Chun Lei; Kent D. Choquette, Editor(s)

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