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Proceedings Paper

Self-aligned 40-nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70 mV/decade
Author(s): Ali Javey; Damon Farmer; Roy Gordon; Hongjie Dai
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Paper Abstract

Much progress has been made in recent years in the fabrication and understanding of the operations of Single-walled carbon nanotube (SWNT) field effect transistors (FETs). Nevertheless, it remains a challenge to develop highly scaled device structures for nanotube transistors and push to the performance limit of these molecular materials. The purpose of this work is to fabricate highly scaled SWNT field effect transistors (FETs) and approach the performance limit of carbon nanotube FETs.

Paper Details

Date Published: 25 March 2005
PDF: 5 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.584212
Show Author Affiliations
Ali Javey, Stanford Univ. (United States)
Harvard Univ. (United States)
Damon Farmer, Stanford Univ. (United States)
Harvard Univ. (United States)
Roy Gordon, Stanford Univ. (United States)
Harvard Univ. (United States)
Hongjie Dai, Stanford Univ. (United States)
Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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