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Proceedings Paper

Control and observation of excitonic motion in modulation-doped (Cd,Mn)Te quantum well (Invited Paper)
Author(s): Fumiyoshi Takano; Takashi Tokizaki; Hiro Akinaga; Shinji Kuroda; Koki Takita
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Paper Abstract

Time- and spatial-resolved circular-polarized photoluminescence measurement was performed on an n-type modulation-doped (Cd,Mn)Te quantum well. The spatial extent of PL in the right circular polarization (RCP) got broad with an increase in magnetic field, although, for the left circular polarization (LCP), the extent showed a tendency to contract with the magnetic field. This difference between RCP and LCP is considered to be resulting from the difficulty difference in the formation of a negatively-charged exciton X-. We successfully observed the time-development of an electric-field-induced drift of X-. The drift of X- was found to be promoted by the magnetic fields. This is considered to originate in the suppression of an exciton-magnetic-polaron formation or/and the decrease of a simple spin scattering under the magnetic fields. The scattering time of X- was found to be about the same value as that of the two-dimensional conduction electron. This is the same result as the case of an n-type modulation-doped GaAs quantum well which had been already reported by other group (See References 4 and 5).

Paper Details

Date Published: 13 April 2005
PDF: 8 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.584210
Show Author Affiliations
Fumiyoshi Takano, NRI (Japan)
National Institute of Advanced Industrial Science and Technology (Japan)
Takashi Tokizaki, NRI (Japan)
National Institute of Advanced Industrial Science and Technology (Japan)
Hiro Akinaga, NRI (Japan)
National Institute of Advanced Industrial Science and Technology (Japan)
Shinji Kuroda, Univ. of Tsukuba (Japan)
Koki Takita, Univ. of Tsukuba (Japan)


Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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