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Proceedings Paper

Thin structure of near-field emission of semiconductor laser
Author(s): K. P. Gaikovich; V. F. Dryakhlushin
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Paper Abstract

A near-field structure of the semiconductor laser emission is revealed using image deconvolution of SNOM measurements. The comparison with the atomic-force microscope measurements of the emitting surface relief shows that inhomogenities of this structure are likely related to nano-scale inhomogeneities of the emitting laser surface. To retrieve the true structure of near-field laser emission taking into account the probe transfer function, the image deconvolution method based on the Tikhonov's method of generalized discrepancy was used. As a result, in the SNOM measurements small (3-4%) variations with a spatial size of about 50 nm have been discerned.

Paper Details

Date Published: 24 September 2004
PDF: 8 pages
Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); doi: 10.1117/12.583479
Show Author Affiliations
K. P. Gaikovich, Institute for Physics of Microstructures (Russia)
V. F. Dryakhlushin, Institute for Physics of Microstructures (Russia)

Published in SPIE Proceedings Vol. 5582:
Advanced Optoelectronics and Lasers
Igor A. Sukhoivanov; Vasily A. Svich; Alexander V. Volyar; Yuriy S. Shmaliy; Sergy A. Kostyukevych, Editor(s)

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