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Proceedings Paper

The influence of gain nonlinearities on distortion in semiconductor lasers
Author(s): Vladimir V. Lysak; Richard Schatz; Aleksey V. Shulika; Igor A. Sukhoivanov; O. Kjebon
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Paper Abstract

The semiconductor laser is commonly used as a light source in fiber-optical telecommunication systems. In order to send as much information as possible in a short time, it is important that the laser has a large modulation bandwidth, i.e., the turn-on and turn-off time should be as short as possible. In analogue fiber optic systems for transmission of radio or television signals, it is also important that the light from the laser increases linearly with driving current even at high modulation frequencies. Otherwise, the transmitted signal will become distorted. The modulation bandwidth and the modulation distortion are dependent both on the laser structure and the gain characteristics of the active material. One of the most useful approaches for the time-domain description of the response of optoelectronic devices is the so-called "rate equation model," which has been widely used to describe laser performance. Commonly, laser models with simple gain expressions are used for simulation of laser dynamics. In these models the small-signal dynamic parameters like the differential gain and gain saturation parameter are extracted from modulation response measurements. However, we show that in order to correctly calculate distortion, an accurate model of the dependence of gain on carrier density, n, and photon density, s, is needed. Commonly used gain models, fitted to give exactly the same modulation response can give significantly different distortion behavior.

Paper Details

Date Published: 24 September 2004
PDF: 8 pages
Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); doi: 10.1117/12.583451
Show Author Affiliations
Vladimir V. Lysak, Kharkov National Univ. of Radio Electronics (Ukraine)
Yamagata Univ. (Japan)
Richard Schatz, Kharkov National Univ of Radio Electronics (Sweden)
Aleksey V. Shulika, Kharkov National Univ. of Radio Electronics (Ukraine)
Igor A. Sukhoivanov, Kharkov National Univ of Radio Electronics (Ukraine)
Univ. de Guanajuato (Mexico)
O. Kjebon, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 5582:
Advanced Optoelectronics and Lasers
Igor A. Sukhoivanov; Vasily A. Svich; Alexander V. Volyar; Yuriy S. Shmaliy; Sergy A. Kostyukevych, Editor(s)

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