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Proceedings Paper

Semiconductor lasers on type-I and II heterostructures: numerical analysis and threshold characteristics
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Paper Abstract

The aim of this work is to illustrate features of computation for MQW strained semiconductor lasers based on type-I and II heterostructures. The theoretical results founded on the given distinctions allowed to investigate the threshold current temperature dependence and research the behavior of all its components for InGaAsSb/AlGaAsSb and InGaAsSb/GaSb heterolasers which we have chosen as examples of type-I and II heterostructures respectively. The obtained data and additionally carried out computations assure that further threshold current optimization will result in its lowering.

Paper Details

Date Published: 24 September 2004
PDF: 8 pages
Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); doi: 10.1117/12.583391
Show Author Affiliations
Igor A. Sukhoivanov, Univ. de Guanajuato (Mexico)
Olga V. Mashoshyna, Kharkov National Univ. of Radio Electronics (Ukraine)


Published in SPIE Proceedings Vol. 5582:
Advanced Optoelectronics and Lasers
Igor A. Sukhoivanov; Vasily A. Svich; Alexander V. Volyar; Yuriy S. Shmaliy; Sergy A. Kostyukevych, Editor(s)

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