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Proceedings Paper

Novel photoelectric techniques characterization of semiconductor laser and photodetector materials
Author(s): Yurij P. Gnatenko; Yuri P. Piryatinski; Roman V. Gamernyk; P. A. Skubenko; D. D. Kolendryckyj; Petro M. Bukivskij; Ivan O. Faryna; V. V. Lendel
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Paper Abstract

Novel photoelectric techniques of characterization of semiconductor laser and photodetector materials have elaborated. The measurements of photodiffusion current spectra allow to determine not only the photoionization energy of impurity centers and intrinsic defects but also the type of the photogenerated carriers. In this work for the first time we have also developed novel and efficient technique for characterization of nonlinear and laser materials by using a time-resolved photoelectric spectroscopy. This make possible to study the processes of trapping and detrapping of photoinduced electrons. Mentioned above techniques was used for characterization of energy structure of defects and transport of carriers in the photorefractive CdTe:V crystals.

Paper Details

Date Published: 24 September 2004
PDF: 9 pages
Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); doi: 10.1117/12.583375
Show Author Affiliations
Yurij P. Gnatenko, Institute of Physics (Ukraine)
Yuri P. Piryatinski, Institute of Physics (Ukraine)
Roman V. Gamernyk, Lviv National Univ. (Ukraine)
P. A. Skubenko, Institute of Physics (Ukraine)
D. D. Kolendryckyj, Institute of Physics (Ukraine)
Petro M. Bukivskij, Institute of Physics (Ukraine)
Ivan O. Faryna, Institute of Physics (Ukraine)
V. V. Lendel, Kyiv National Univ. (Ukraine)

Published in SPIE Proceedings Vol. 5582:
Advanced Optoelectronics and Lasers
Igor A. Sukhoivanov; Vasily A. Svich; Alexander V. Volyar; Yuriy S. Shmaliy; Sergy A. Kostyukevych, Editor(s)

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