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Proceedings Paper

STM characterization of phosphine adsorption on STM-patterned H:Si(001)surfaces
Author(s): Toby Hallam; Neil J. Curson; Lars Oberbeck; Michelle Y. Simmons
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Paper Abstract

The control of feature sizes down to the atomic scale made possible with STM based hydrogen lithography allows unprecedented accuracy in the control of the number and distribution of dopant atoms in devices. We present a detailed STM study of the adsorption of PH3 on STM-patterned H:Si(001) surfaces for the controlled placement of P dopants in Si. In particular we characterise the effect of the orientation of lithographic line features relative to the surface dimer rows on phosphine adsorption and the scaling of dopant density feature size down to single atom lithography.

Paper Details

Date Published: 23 February 2005
PDF: 8 pages
Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.583316
Show Author Affiliations
Toby Hallam, Univ. of New South Wales (Australia)
Neil J. Curson, Univ. of New South Wales (Australia)
Lars Oberbeck, Univ. of New South Wales (Australia)
Michelle Y. Simmons, Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 5650:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II
Jung-Chih Chiao; David N. Jamieson; Lorenzo Faraone; Andrew S. Dzurak, Editor(s)

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