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Proceedings Paper

Single-electron transistor coupled to a silicon nano-MOSFET
Author(s): Victor C. Chan; Tilo Markus Buehler; Dane R. McCamey; Andrew J. Ferguson; David J. Reilly; Changyi Yang; Toby Hopf; Andrew S. Dzurak; A. R. Hamilton; David N. Jamieson; Robert G. Clark
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Paper Abstract

By capactively coupling sensitive charge detectors (i.e. single-electron transistors - SETs) to nanostructures such as quantum dots and two-dimensional systems, it is possible to investigate charge transport properties in extremely low conduction regimes where direct transport measurements are increasingly difficult. Ion-implanted nano-MOSFETs coupled to aluminium SETs have been constructed in order to study charge transport between locally doped regions in Si at mK temperatures. This configuration allows for direct source-drain measurement as well as non-invasive charge detection. Of particular interest are the effects of material defects and gate control on charge transport, which is of relevance to Si-based quantum computing.

Paper Details

Date Published: 23 February 2005
PDF: 5 pages
Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.583293
Show Author Affiliations
Victor C. Chan, Univ. of New South Wales (Australia)
Tilo Markus Buehler, Univ. of New South Wales (Australia)
Dane R. McCamey, Univ. of New South Wales (Australia)
Andrew J. Ferguson, Univ. of New South Wales (Australia)
David J. Reilly, Univ. of New South Wales (Australia)
Changyi Yang, Univ. of Melbourne (Australia)
Toby Hopf, Univ. of Melbourne (Australia)
Andrew S. Dzurak, Univ. of New South Wales (Australia)
A. R. Hamilton, Univ. of New South Wales (Australia)
David N. Jamieson, Univ. of Melbourne (Australia)
Robert G. Clark, Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 5650:
Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II
Jung-Chih Chiao; David N. Jamieson; Lorenzo Faraone; Andrew S. Dzurak, Editor(s)

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