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Proceedings Paper

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
Author(s): Jung-Tang Chu; Wen-Deng Liang; Chih-Chiang Kao; Hung-Wen Huang; Chen-Fu Chu; Hao-Chung Kuo; S. C. Wang
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Paper Abstract

Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

Paper Details

Date Published: 7 March 2005
PDF: 7 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.583288
Show Author Affiliations
Jung-Tang Chu, National Chiao Tung Univ. (Taiwan)
Wen-Deng Liang, National Chiao Tung Univ. (Taiwan)
Chih-Chiang Kao, National Chiao Tung Univ. (Taiwan)
Hung-Wen Huang, National Chiao Tung Univ. (Taiwan)
Chen-Fu Chu, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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