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Proceedings Paper

Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers
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Paper Abstract

1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than ~35% as the temperature raised from room temperature to 70oC. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of ~ 5.25 GHz/(mA)1/2. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25°C to 70°C.

Paper Details

Date Published: 14 March 2005
PDF: 6 pages
Proc. SPIE 5737, Vertical-Cavity Surface-Emitting Lasers IX, (14 March 2005); doi: 10.1117/12.583286
Show Author Affiliations
Hao-Chung Kuo, National Chiao-Tung Univ. (Taiwan)
Yi-An Chang, National Chiao-Tung Univ. (Taiwan)
Ya-Hsien Chang, National Chiao-Tung Univ. (Taiwan)
Jung-Tang Chu, National Chiao-Tung Univ. (Taiwan)
Min-Ying Tsai, National Chiao-Tung Univ. (Taiwan)
Shing-Chung Wang, National Chiao-Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5737:
Vertical-Cavity Surface-Emitting Lasers IX
Chun Lei; Kent D. Choquette, Editor(s)

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