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Proceedings Paper

The effect of deposition parameters on the boron nitride films grown on Si(100) by PLD with nanosecond pulses
Author(s): C. R. Luculescu; Shunichi Sato; Constantin G. Fenic
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Paper Abstract

The effects of several deposition parameters on the quality of deposited boron nitride (BN) films by pulsed laser deposition (PLD) with short laser pulses are studied. The laser fluence, nitrogen background pressure, Si(100) substrate temperature and laser wavelength were varied in order to find the maximum content of the cubic phase in our BN films. We found that laser fluence and wavelength are affecting strongly the structure of BN films while background pressure and substrate temperature are affecting slightly the film morphology.

Paper Details

Date Published: 21 October 2004
PDF: 9 pages
Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); doi: 10.1117/12.582922
Show Author Affiliations
C. R. Luculescu, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Shunichi Sato, Tohoku Univ. (Japan)
Constantin G. Fenic, National Institute for Laser, Plasma, and Radiation Physics (Romania)

Published in SPIE Proceedings Vol. 5581:
ROMOPTO 2003: Seventh Conference on Optics
Valentin I. Vlad, Editor(s)

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