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Proceedings Paper

Highly efficient laser operation of Nd-vanadates under direct pumping into the emitting level
Author(s): Nicolaie A. Pavel; Yoichi Sato; Voicu Lupei; Takunori Taira
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Paper Abstract

Highly efficient one-micron laser emission in Nd-doped vanadates under direct pumping into the 4F3/2 emitting level is reported. A 1.0-mm-thick, 1.0-at.% Nd:YVO4 crystal operated with 80% slope efficiency (79% overall optical-to-optical efficiency) under Ti:Sapphire pumping and 75% slope efficiency versus absorbed power under diode laser pumping at 880 nm. Slope efficiency of 80% (overall optical-to-optical efficiency of 77%) under Ti:Sapphire pumping and 66% with respect to the absorbed power under diode laser pumping at 879 nm is obtained from a 3.0-mm-thick, 1.0-at.% Nd:GdVO4 crystal. These values, which were superior to those obtained by pumping into the 4F5/2 level, were explained consistently by the effect of the quantum defect between the pump and laser radiation, the superposition of pump and laser mode volumes, the pump level efficiency and the residual optical losses.

Paper Details

Date Published: 21 October 2004
PDF: 8 pages
Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); doi: 10.1117/12.582790
Show Author Affiliations
Nicolaie A. Pavel, Institute for Molecular Science (Japan)
Institute of Atomic Physics (Romania)
Yoichi Sato, Institute for Molecular Science (Japan)
Voicu Lupei, Institute of Atomic Physics (Romania)
Takunori Taira, Institute for Molecular Science (Japan)

Published in SPIE Proceedings Vol. 5581:
ROMOPTO 2003: Seventh Conference on Optics
Valentin I. Vlad, Editor(s)

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