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Proceedings Paper

Si- and SiGe- high-k oxide nanostructures for optoelectronic devices
Author(s): Jose Alexander de King Freire; Teldo A. S. Pereira; Jusciane Costa e Silva; Gil A. Farias; Valder N. Freire; Eronides Felisberto da Silva
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Paper Abstract

In this work, we will discuss Si-/SiGe and high-κ oxides nanostructures. The exciton properties of strained Si/Si1-χGeχ quantum well (QW) are calculated taking into account interface effects and both possibilities of the band lineup of the conduction-band offset, type-I and type-II. Our numerical results show that interface fluctuations of only 10 Å in a Si/Si1-χGeχ 50 Å type-I QW (type-II QW) leads to a 25 meV (10 meV) blueshift of the exciton (transition) energy. Concerning high- κ nanostructures, our simulation was performed in order to analyse how the charge image effects can modify the electronics properties in Si/HfO2 and Si/SrTiO3 based quantum wells. The results of Si/SrTiO3 (Si/HfO2) quantum wells indicate a recombination emission difference, as compared with the case when no charge image effects are included, of the order of 1.5 eV (0.7 eV).

Paper Details

Date Published: 25 March 2005
PDF: 9 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.582773
Show Author Affiliations
Jose Alexander de King Freire, Univ. Federal do Ceara (Brazil)
Teldo A. S. Pereira, Univ. Federal do Ceara (Brazil)
Jusciane Costa e Silva, Univ. Federal do Ceara (Brazil)
Gil A. Farias, Univ. Federal do Ceara (Brazil)
Valder N. Freire, Univ. Federal do Ceara (Brazil)
Eronides Felisberto da Silva, Univ. Federal de Pernambuco (Brazil)

Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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